Design and Modelling of Tunnel Field Effect Transistor- using TCAD Modeling

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Published: May 5, 2023
DOI: https://doi.org/10.17762/ijritcc.v11i4s.6532
Keywords:
TFET, V-TFET, Junction less V-TFET, TCAD modelling, GaSb, H-TFET

Main Article Content

Kalivaraprasad B
Assistant Professor, Koneru Lakshmaiah Education Foundation (KLEF) Vaddeswaram, Andhra Pradesh 522302, India
S. Ravi Chand
Professor, Department of Electronics and Communication Engineering, Nalla Narasimha Reddy Education Society's Group of Institutions - Integrated Campus Hyderabad
S. Koteswari
Professor & HOD,Department of Electronics and Communication Engineering, Pragati Engineering College, East Godavari District, Andhra Pradesh, India-533437
P. Madhu Sudhan Reddy
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields Vaddeswaram, Guntur, Andhra Pradesh, India-522502
K. Sai Anurag
Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation Green Fields, Vaddeswaram, Guntur Dist, Andhra Pradesh, India-522502
K. Palanivel Rajan
Assistant Professor, Department of Electronics and Communication Engineering PSNA College of Engineering and Technology,Dindigul-624622 , Tamil Nadu, India

Abstract

The purpose of this research was to suggest a junction-less strategy for a vertical Tunnel Field Effect Transistor, which would increase the device's efficiency. In this study, we examine the similarities and differences between a negative capacitor TFET and a vertically generated TFET with a source pocket and a heterostructure-based nanowire gate. And how the channel transit impacts the output qualities of a sub-100 nanometer sized device. The Silvaco TCAD (a commercially available tool) was used to simulate a tri-layer high-K dielectric made of hafnium zirconium oxide (HZO) and titanium dioxide (TiO2) materials as gate stacking to the V-TFET and GAA-NC-TFET structures, and the tunnelling and transport parameters were calibrated experimentally. A short bandgap material, GaSb, in the home region to enhance carrier tunnelling via the mentioned three source (GaSb)-channel (Si) heterojunction at varying biases were utilized. Motion, tube length, and saturating velocity are only few of the transport channel characteristics that are investigated. As a result of the building's vertical orientation, the electric field is enhanced, allowing for an ION current of up to 104 Am2. The most unexpected result of this device is that a high ION/IOFF may increase mobility and reduce saturation velocity, perhaps reducing the drain voltage at saturation. The proposed biosensor's sensitivity was multiplied by 108 when vertical and lateral tunnelling were used in tandem. We apply a variety of optimisation strategies to deal with this problem, despite the fact that quantum confinement reduces the effect of mobility variations on device performance. When biomolecules were positively charged, the drain current increased, and when they were negatively charged, the drain current decreased.

Article Details

How to Cite
B, K. ., Chand, S. R. ., Koteswari, S. ., Reddy, P. M. S. ., Anurag, K. S. ., & Rajan, K. P. . (2023). Design and Modelling of Tunnel Field Effect Transistor- using TCAD Modeling. International Journal on Recent and Innovation Trends in Computing and Communication, 11(4s), 224–231. https://doi.org/10.17762/ijritcc.v11i4s.6532
Issue
Vol. 11 No. 4s (2023)
Section
Articles

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