Memory Reliability Enhancement against Multiple Cell Upsets Using Decimal Matrix Code for 32-Bit Data

Main Article Content

Satyabala, Assistant Prof. Akhilesh Jain

Abstract

An important issue in the reliability of memories exposed to radiation environment is transient multiple cells upsets (MCUs). To protect the memory data from radiations and transients many improved packaging techniques are available. But, a particular packaging provides protection from a limited variation of radiations. Today the devices are exposed to a very wide range of environment radiations due to increasing applications in the field of wireless communication. So some additional data preservation techniques are always preferred for authenticating the data before it is processed. Some of these techniques use encoded data to be stored in memories. These techniques are error correction codes (ECCs). It is always preferred to implement an error correction code that requires a less number of redundant bits to be stored and a minimized delay overhead in data correction. This paper presents an FPGA based implementation of memory data error detection and correction code that involves simple decimal addition algorithm in the encoding of data that is to be stored in memory. The decoding of the data for error detection and correction is based on the Hamming Code. This technique involves divide-symbol concept to represent the linear data in groups to make symbolic code. The length of the symbol is inversely proportional to the delay overhead of the code

Article Details

How to Cite
, S. A. P. A. J. (2016). Memory Reliability Enhancement against Multiple Cell Upsets Using Decimal Matrix Code for 32-Bit Data. International Journal on Recent and Innovation Trends in Computing and Communication, 4(4), 654–659. https://doi.org/10.17762/ijritcc.v4i4.2097
Section
Articles