Design and Analysis of Piezoelectrically Actuated RF-MEMS Switches using PZT and AlN

Abstract

This paper proposes the design and analysis of RF MEMS switches using two different PZT materials. The piezoelectrically actuated switches exhibit an actuation voltage of 2-5 Volts which is very low compared to electro statically actuated switches. The switches have been analyzed for variations in beam length. Piezoelectric layer thickness, gap between the beam and transmission line. Electromagnetic performance of the switches has been carried out in HFSS v.13.0. The isolation thus obtained is as high as 42.50 dB and the insertion loss obtained is as low as 0.0002 dB.
DOI: 10.17762/ijritcc2321-8169.150697