Performance Analysis of FinFET Based Inverter circuit, NAND and NOR Gate at 22nm and 14nm Node technologies.

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Raju Hajare, Sunil C, Sumanth Jain P R, Anish Kumar A R, Sriram AS


The size of integrated devices such as PC, mobiles etc are reducing day by day with multiple operations, all of these is happening because of the scaling down the size of MOSFETs which is the main component in memory, processors and so on. As we scale down the MOSFETs to the nanometer regime the short channel effects arises which degrades the system performance and reliability. Here in this paper we describe the alternative MOSFET called FinFET which reduces the short channel effects and its performance analysis of digital applications such as inverter circuit, nand and nor gates at 22nm and 14nm node technologies.
DOI: 10.17762/ijritcc2321-8169.150508

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How to Cite
, R. H. S. C. S. J. P. R. A. K. A. R. S. A. “ NAND and NOR Gate at 22nm and 14nm Node Technologies”. International Journal on Recent and Innovation Trends in Computing and Communication, vol. 3, no. 5, May 2015, pp. 2527-32, doi:10.17762/ijritcc.v3i5.4278.