MoS2 and MoSe2 Single Crystal Growth of Transition Metal Dichalcogenides

Abstract

Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transitions under pressure. The high quality of the crystals grown by using this method is confirmed by X-ray di?raction studies, Raman spectroscopy and electrical resistivity measurements, and proved to be higher than that of commercially available MoS2 crystals.