Memristor Logic versus TTL Logic: A Comparative Design Analysis and Validation

Abstract

High speed, cost effective, low power, and high density non-volatile memory devices aids as driving force to carry out research in the field of solid state non-volatile memories. Memristor (Memory-Resistor) is a new category of non-CMOS non-volatile memory whose functional operation is manifested itself as the movement of ionic defects in the lattice of a crystalline material. As the name “Memory Resistor” implies that it is a non-volatile random access memory (NVRAM) i.e. it does not lose its data even when the power is switched-off. In this paper, a new model called Voltage Threshold Adaptive Memristor (VTEAM) model is presented in the context of analysing the logic gates made of Memristors .This paper focuses on the parametric variation of the VTEAM model and also on the implementation of the basic logic gates using Memristors as the basic component. On the basis of simulation results, it is observed that the device shows better accuracy and also faster read operation compared to TTL counterpart. As a case study, NAND and XOR gates are implemented and tested