JAIN, P. U. .; TOMAR, V. . Expanded Noise Margin 10T SRAM Cell using Finfet Device. International Journal on Recent and Innovation Trends in Computing and Communication, [S. l.], v. 11, n. 9s, p. 767–776, 2023. DOI: 10.17762/ijritcc.v11i9s.7959. Disponível em: https://ijritcc.org/index.php/ijritcc/article/view/7959. Acesso em: 20 may. 2024.