RAMESH GULLAPALLY, et al. Design of SRAM Cell using Modified Lector and Dual Threshold Method Based on FINFET. International Journal on Recent and Innovation Trends in Computing and Communication, [S. l.], v. 11, n. 10, p. 2156–2163, 2023. DOI: 10.17762/ijritcc.v11i10.8903. Disponível em: https://ijritcc.org/index.php/ijritcc/article/view/8903. Acesso em: 15 mar. 2026.