Design of SRAM Cell using Modified Lector and Dual Threshold Method Based on FINFET

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Ramesh Gullapally, N. Siva Sankara Reddy, P. Chandra Sekhar

Abstract

FinFET (Fin Field Effect Transistor) is a new technology that satisfies the demand for a superior storage system by improving transistor circuit design (SS). CMOS devices experience a wide range of issues due to the gate's diminishing ability to control the channel. Increased total production costs are a few of these disadvantages. But this store needs to dissipate less power, have a quick access time, and a low leakage current. The increased power dissipation and leakage current of traditional CMOS-based SRAM (Static RAM) architectures cause a sharp decline in performance. The nanoscale gadget called FinFET is being introduced for use in SRAM fabrication due to its 3D gate architecture. The adoption of FinFET has helped boost overall performance in terms of efficiency, power, and footprint. And because it is immune to SCEs, FinFET has become the transistor of choice. In this study, we have examined a number of FinFET-based SRAM cells and compared them with CMOS technology. We have also suggested a novel 14T SRAM design that uses the Dual Threshold Method and Modified Lector Approach with FinFET, and it is implemented for the 1bit, 4bit, and 8bit.

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How to Cite
Ramesh Gullapally, et al. (2023). Design of SRAM Cell using Modified Lector and Dual Threshold Method Based on FINFET. International Journal on Recent and Innovation Trends in Computing and Communication, 11(10), 2156–2163. https://doi.org/10.17762/ijritcc.v11i10.8903
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Articles
Author Biography

Ramesh Gullapally, N. Siva Sankara Reddy, P. Chandra Sekhar

1Ramesh Gullapally, 2Dr. N. Siva Sankara Reddy, 3Dr. P. Chandra Sekhar

1Research Scholar, Department of Electronics and Communication Engineering, University College of Engineering, Osmania University, Hyderabad, ramesh.gullapally@gmail.com.

2Associate Professor, Department of Electronics and Communication

Engineering, Vasavi College of Engineering, Hyderabad, nssreddy69@gmail.com.

3Professor, Department of Electronics and Communication Engineering,

University College of Engineering, Osmania University, Hyderabad, sekharpaidimarry@gmail.com.