Structural Properties of Low Energy Ion Beam Kr Irradiated Sb/Al Bilayers Deposited on Silicon Substrate.

Abstract

In the present work, Sb(~50nm)/Al (~50nm) thin films were deposited successively on the silicon substrate by e-beam evaporation method under     2×10^-5 mbar pressure. The Sb/Al bilayer was then irradiated with beam of 350 KeV Kr⁺¹ with fluence 3×10¹⁶ ions/cm². The sample was then characterised by XRD and Rutherford backscattering spectrometry (RBS). The XRD study reveals AlSb phase formation in Pristine sample. RBS also confirms mixing in Pristine sample.